Semiconductor device and electronic apparatus

ABSTRACT

Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

TECHNICAL FIELD

The present technology relates to semiconductor devices and electronicapparatuses. More particularly, the present technology relates to asemiconductor device and electronic apparatus in which deformation of alens does not occur.

BACKGROUND ART

In the recent development of semiconductor technologies, thethree-dimensional multilayer technique of stacking elements in thevertical direction to construct three-dimensional structure hasattracted attention as a Beyond-Moore technique that is an alternativeto More-Moore techniques of increasing integration densities. It isdifficult to design a two-dimensional layout of interconnection, whichleads to large power consumption. It has been proposed that athree-dimensional interconnection layout in which circuit blocks havingvarious functions are divided into multiple layers, and chips areconnected together, can reduce power consumption or increase processingspeed. It has also been proposed that the use of wafer level packaging,which is a three-dimensional multilayer technique used in a package, canreduce cost and size.

In particular, electronic apparatuses that employ a camera module, suchas a mobile telephone, etc., require a further reduction in size. Such ademand is becoming unsatisfied with a conventional structure in which asolid-state image sensor is provided in a ceramic package and a glassplate is attached to a surface so that the solid-state image sensor issealed.

Therefore, instead of the conventional package structure in which thereis a cavity between the glass and the solid-state image sensor, astructure in which a glass plate is attached directly to microlenses iscurrently under development. It has been proposed that, in such acavityless package structure aimed at reducing profile and size, themicrolenses are formed of SiN (silicon nitride), which is an inorganicmaterial that has a high refractive index (highly-refractive), in orderto make a difference in refractive index between a resin with which asurface portion of the microlenses that is a cavity is filled and themicrolenses (see Patent Literature 1).

When the microlens is formed of SiN, which is transparent and has a highrefractive index, SiN has a tendency to cause high membrane stress.Therefore, a problem arises that a defective surface such as a blemishor distortion occurs due to a significant difference in membrane stressbetween the microlens and the underlying resin. To address this problem,it has been proposed that at least one stress reduction layer isinterposed (see Patent Literature 2).

CITATION LIST Patent Literature

Patent Literature 1: JP 2003-338613A

Patent Literature 2: JP 2012-023251A

SUMMARY OF INVENTION Technical Problem

When the microlens is formed of an inorganic material which has a highrefractive index (highly-refractive), such as SiN, etc., on a resin,then if the shape of the microlens layer has a non-uniform region, thebalance of stress is lost due to SiN, which has a tendency to cause highmembrane stress, so that a wrinkle or distortion is likely to occur.

When such a defective surface such as a wrinkle, distortion, etc.,occurs, uniformity or the like in a wafer surface or chip deteriorates,leading to a deterioration in light collection characteristics.Therefore, there is a demand for a configuration that keeps the balanceof stress and therefore is free from a wrinkle or distortion.

With these circumstances in mind, the present technology has been madeto provide an image sensor that keeps the balance of stress andtherefore is free from a wrinkle or distortion, and has good lightcollection characteristics.

Solution to Problem

According to an aspect of the present technology, there is provided afirst semiconductor device including: a multilayer substrate includingan optical element; a light-transmitting plate provided on the substrateto cover the optical element; and a lens of an inorganic materialprovided between the substrate and the light-transmitting plate. Astructure having a same strength as a strength per unit area of the lensis provided at a portion outside an effective photosensitive regionwhere the optical element is formed, when the substrate is viewed inplan.

A first organic material layer provided below the lens; and a secondorganic material layer provided above the lens can be further included.

The structure can have a same shape as the lens and can be formed of theinorganic material.

The structure can be a flat film that is formed of a same material asthe lens and has a same volume per unit area as the lens.

The structure can be a flat film that is designed to have a samestrength per unit area as the lens.

A film having one end provided as an extension of the lens and the otherend connected to a predetermined layer of the substrate can be furtherincluded.

The film can be continuously provided to surround the effectivephotosensitive region.

The film can be discontinuously provided to surround the effectivephotosensitive region.

The inorganic material can be silicon nitride.

The semiconductor device can be a back-illuminated image sensor.

The semiconductor device can be a front-illuminated image sensor.

The first semiconductor device according to an aspect of the presenttechnology includes a multilayer substrate including an optical element,a light-transmitting plate provided on the substrate to cover theoptical element, and a lens of an inorganic material provided betweenthe substrate and the light-transmitting plate. A structure having asame strength as a strength per unit area of the lens is provided at aportion outside an effective photosensitive region where the opticalelement is formed, when the substrate is viewed in plan.

According to an aspect of the present technology, there is provided asecond semiconductor device including: a multilayer substrate includingan optical element; a light-transmitting plate provided on the substrateto cover the optical element; and a lens of an inorganic materialprovided between the substrate and the light-transmitting plate. Aportion of the lens is connected to a predetermined layer of thesubstrate by a film formed of a same material as the lens.

The second semiconductor device according to an aspect of the presenttechnology includes a multilayer substrate including an optical element,a light-transmitting plate provided on the substrate to cover theoptical element, and a lens of an inorganic material provided betweenthe substrate and the light-transmitting plate. A portion of the lens isconnected to a predetermined layer of the substrate by a film formed ofa same material as the lens.

According to an aspect of the present technology, there is provided anelectronic apparatus including: a semiconductor device including amultilayer substrate including an optical element, a light-transmittingplate provided on the substrate to cover the optical element, and a lensof an inorganic material provided between the substrate and thelight-transmitting plate, in which a structure having a same strength asa strength per unit area of the lens is provided at a portion outside aneffective photosensitive region where the optical element is formed,when the substrate is viewed in plan; and a signal processing unit thatperforms a signal process on a pixel signal output from thesemiconductor device.

An electronic apparatus according to an aspect of the present technologyincludes a multilayer substrate including an optical element, alight-transmitting plate provided on the substrate to cover the opticalelement, and a lens of an inorganic material provided between thesubstrate and the light-transmitting plate. Also, a structure having asame strength as a strength per unit area of the lens is provided at aportion outside an effective photosensitive region where the opticalelement is formed, when the substrate is viewed in plan. Also, a signalprocess is performed on a pixel signal output from the semiconductordevice.

Advantageous Effects of Invention

According to the present technology, an image sensor that keeps thebalance of stress and therefore is free from a wrinkle or distortion,and has good light collection characteristics, can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a system configuration diagram showing an exampleconfiguration of a CMOS image sensor.

FIG. 2 is a cross-sectional view showing an example configuration of asemiconductor package including a CMOS image sensor to which the presenttechnology is applied.

FIG. 3 is a diagram for describing regions.

FIG. 4 is a cross-sectional view showing a configuration of asemiconductor package in a second embodiment.

FIG. 5 is a cross-sectional view showing a configuration of asemiconductor package in a third embodiment.

FIG. 6 is a cross-sectional view showing a configuration of asemiconductor package in a fourth embodiment.

FIG. 7 is a cross-sectional view showing a configuration of asemiconductor package in a fifth embodiment.

FIG. 8 is a cross-sectional view showing a configuration of asemiconductor package in a sixth embodiment.

FIG. 9 is a diagram for describing an arrangement of an anchoring.

FIG. 10 is a cross-sectional view showing a configuration of asemiconductor package in a seventh embodiment.

FIG. 11 is a diagram for describing a configuration of an electronicapparatus.

DESCRIPTION OF EMBODIMENTS

Embodiments for carrying out the present technology (hereinafterreferred to as embodiments) will now be described.

Note that description will be provided in the following order.

1. Configuration of image capture apparatus

2. Configuration of semiconductor package in first embodiment

3. Configuration of semiconductor package in second embodiment

4. Configuration of semiconductor package in third embodiment

5. Configuration of semiconductor package in fourth embodiment

6. Configuration of semiconductor package in fifth embodiment

7. Configuration of semiconductor package in sixth embodiment

8. Configuration of semiconductor package in seventh embodiment

9. Configuration of electronic apparatus

Configuration of Image Capture Apparatus

FIG. 1 is a system configuration diagram schematically showing aconfiguration of an image capture apparatus to which the presenttechnology is applicable, such as a CMOS image sensor that is a kind ofX-Y addressing image capture apparatus. Here, the CMOS image sensorrefers to an image sensor that is produced by utilizing or partiallyusing a CMOS process.

The CMOS image sensor 100 of FIG. 1 includes a pixel array unit 111 thatis formed on a semiconductor substrate (not shown), and a peripheralcircuit unit that is integrated on the same semiconductor substrate onwhich the pixel array unit 111 is provided. The peripheral circuit unitincludes, for example, a vertical drive unit 112, a column processingunit 113, a horizontal drive unit 114, and a system control unit 115.

The CMOS image sensor 100 further includes a signal processing unit 118and a data storage unit 119. The signal processing unit 118 and the datastorage unit 119 may be mounted on the same substrate on which the CMOSimage sensor 100 is provided, or may be provided on another substratethat is different from the substrate on which the CMOS image sensor 100is provided. Also, a process of each of the signal processing unit 118and the data storage unit 119 may be a process that is performed by anexternal signal processing unit, such as a digital signal processor(DSP) circuit or software, that is provided on another substrate that isdifferent from the substrate on which the CMOS image sensor 100 isprovided.

The pixel array unit 111 includes unit pixels (hereinafter also simplyreferred to as “pixels”) that have a photoelectric conversion unit thatgenerates and stores photoelectric charge depending on the amount ofreceived light. The unit pixels are two-dimensionally arranged in a rowdirection and a column direction, i.e., in a matrix. Here, the rowdirection refers to a direction in which pixels are arranged in a pixelrow (i.e., a horizontal direction), and the column direction refers to adirection in which pixels are arranged in a pixel column (i.e., avertical direction).

In the pixel array unit 111, for the pixels arranged in a matrix, apixel drive line 116 is provided in the row direction for each pixelrow, and a vertical signal line 117 is provided in the column directionfor each pixel column. The pixel drive line 116 transmits a drive signalfor performing drive when a signal is read from a pixel. Although, inFIG. 1, the pixel drive line 116 is shown as a single interconnect, thepixel drive line 116 is not limited to a single interconnect. One end ofthe pixel drive line 116 is connected to an output end of acorresponding row of the vertical drive unit 112.

The vertical drive unit 112, which includes a shift register, addressdecoder, or the like, drives the pixels of the pixel array units 111 allat once or on a row-by-row basis or the like. Specifically, the verticaldrive unit 112 includes a system control unit 115 that controls thevertical drive unit 112, and a drive unit that drives each pixel of thepixel array unit 111. Although the detailed configuration of thevertical drive unit 112 is not shown, the vertical drive unit 112typically includes two scan systems, i.e., a read scan system and asweep scan system.

The read scan system selectively scans the unit pixels of the pixelarray unit 111 successively on a row-by-row basis in order to readsignals from the unit pixels. A signal read from the unit pixel is ananalog signal. The sweep scan system performs sweep scan on a read rowwhich is to be read out by scanning by the read scan system, a shutterspeed time in advance of the read scan.

The sweep scan by the sweep scan system sweeps unnecessary charge fromthe photoelectric conversion units of the unit pixels in a read row, toreset the photoelectric conversion units. Also, by sweeping unnecessarycharge using the sweep scan system (resetting), a so-called electronicshutter operation is performed. Here, the electronic shutter operationrefers to an operation of discarding photoelectric charge of thephotoelectric conversion unit, and starting another exposure (startingstoring photoelectric charge).

A signal read by a read operation by the read scan system corresponds tothe amount of light that is received after the immediately previous readoperation or an electronic shutter operation. Also, a period of timefrom the read timing of the immediately previous read operation or thesweep timing of an electronic shutter operation to the read timing ofthe current read operation, is an exposure time of photoelectric chargein the unit pixel.

Signals output from the unit pixels in a pixel row that have beenselectively scanned by the vertical drive unit 112 are input to thecolumn processing unit 13 through the respective vertical signal lines117 in the respective pixel columns The column processing unit 113performs a predetermined signal process on the signals output from thepixels in a selected row through the respective vertical signal lines117 in the respective pixel columns of the pixel array unit 111, andtemporarily holds the pixel signals after the signal process.

Specifically, the column processing unit 113 performs at least a noiseremoval process, such as correlated double sampling (CDS), as the signalprocess. The CDS process of the column processing unit 113 removespixel-specific fixed pattern noise, such as reset noise, variations inthreshold of an amplifier transistor in a pixel, or the like. Inaddition to the noise removal process, the column processing unit 113may have, for example, an analog-digital (AD) conversion function toconvert an analog pixel signal into a digital signal and output thedigital signal.

The horizontal drive unit 114, which includes a shift register, addressdecoder, or the like, successively selects a unit circuit correspondingto a pixel column of the column processing unit 113. By the selectivescan performed by the horizontal drive unit 114, a pixel signal that hasbeen subjected to signal processing by each unit circuit in the columnprocessing unit 113 is successively output.

The system control unit 115, which includes a timing generator thatgenerates various timing signals, and the like, performs a drive controlon the vertical drive unit 112, the column processing unit 113, thehorizontal drive unit 114, and the like, according to the timingsgenerated by the timing generator.

The signal processing unit 118, which has at least a calculationprocessing function, performs various signal processes, such as acalculation process and the like, on a pixel signal output from thecolumn processing unit 113. The data storage unit 119 temporarily storesdata necessary for a signal process performed by the signal processingunit 118.

Configuration of Semiconductor Package in First Embodiment

FIG. 2 is a cross-sectional view schematically showing a basicconfiguration of a semiconductor package including the CMOS image sensor100 of FIG. 1 that is an image capture apparatus to which the presenttechnology is applied. The semiconductor package 200 of FIG. 2 includesa back-illuminated CMOS image sensor. Note that, referring to FIG. 3 aswell, the semiconductor package 200 is divided into three regions, i.e.,an effective pixel region A1, an effective pixel region-surroundingregion A2, and an end portion A3, each of which will be described.Firstly, a configuration of the semiconductor package 200 in theeffective pixel region A1 will be described.

In the semiconductor package 200 in the effective pixel region A1 shownin FIG. 2, an interconnection layer 212 of SiO₂ is formed on a supportsubstrate 211, and a silicon substrate 213 is formed on theinterconnection layer 212. The support substrate 211 is formed ofsilicon, glass epoxy, glass, plastic, or the like. On a surface of thesilicon substrate 213, a plurality of photodiodes 214 (optical elements)that are the photoelectric conversion units of the pixels are formed andspaced at predetermined intervals.

A protective film 215 of SiO₂ is formed on the silicon substrate 213 andthe photodiode 214. On the protective film 215, a light shield film 216for preventing light from leaking into adjacent pixels is formed betweenadjacent photodiodes 214. A planarization film 217 for planarizing aregion where a color filter is formed is formed on the protective film215 and the light shield film 216.

A color filter layer 218 is formed on the planarization film 217. Aplurality of color filters are provided on the color filter layer 218for the respective pixels. The colors of the color filters are arrangedin the Bayer pattern, for example.

A first organic material layer 219 is formed on the color filter layer218. The first organic material layer 219 is formed of an acrylic resinmaterial, styrene-based resin material, epoxy resin material, or thelike. A microlens layer 220 is formed on the first organic materiallayer 219. Thus, the microlens layer 220 is provided on the multilayersubstrate including the photodiodes 214. A microlens for collecting andbringing light to the photodiode 214 of a pixel is formed in themicrolens layer 220 for each pixel. The microlens layer 220, which is aninorganic material layer, is formed of SiN, SiO, SiOxNY (where 0<x≦1 and0<y≦1).

A cover glass 221 is attached onto the microlens layer 220 with a secondorganic material layer 222 being interposed between the cover glass 221and the microlens layer 220. The cover glass 221 is not limited toglass, and may be a light-transmitting plate of a resin or the like. Aprotective film for preventing infiltration of water or impurities maybe formed between the microlens layer 220 and the cover glass 221.

The second organic material layer 222 is formed of an acrylic resinmaterial, styrene-based resin material, epoxy resin material, or thelike, as with the first organic material layer 219.

Here, a configuration of the microlens layer 220 will be described withreference to FIG. 3 in addition to FIG. 2. FIG. 3 is a plan viewschematically showing a configuration of the semiconductor package 200.The semiconductor package 200 is roughly divided into an effectivephotosensitive region A1, an effective photosensitive region-surroundingregion A2, and an end portion A3.

The effective photosensitive region A1 is a region where the pixelshaving the photodiode 214 are provided on a surface of the siliconsubstrate 213. The effective photosensitive region A1 is a region wherethe pixels having the photodiode 214 are not provided, and which isprovided around the effective photosensitive region A1. The end portionA3 is a region for cleaving, for example, a wafer into the semiconductorpackages 200, which includes an end portion (hereinafter referred to asa chip end) of the semiconductor package 200.

Incidentally, the microlens layer 220 is interposed between the firstorganic material layer 219 and the second organic material layer 222. Ofrecent chip size packages (CSPs), a cavityless CSP is becomingwidespread in order to reduce the profile and size. In the cavitylessCSP, the inorganic material SiN, having a high refractive index(highly-refractive), is mostly used as a material for the microlenslayer 220 in order to make a difference in refractive index between aless-refractive resin filling a space (corresponding to the secondorganic material layer 222) and the microlens layer 220.

In such a structure, SiN forming the microlens layer 220 has highmembrane stress, and the microlens layer 220 is surrounded by the resinof the second organic material layer 222. In such a state, whentemperature is high, the second organic material layer 222 around themicrolens layer 220 may be softened, so that membrane stress is reduced,and therefore, the lens of the microlens layer 220 may be deformed. Thedeformation of the lens would lead to deterioration of image quality,such as shading, color shading, or the like, and therefore, it isnecessary to prevent such deformation of the lens.

Therefore, as shown in FIG. 2, a dummy lens 251 is provided in theeffective photosensitive region-surrounding region A2. The dummy lens251 is formed of the same material as that of the microlens layer 220(the inorganic material SiN (silicon nitride), or the like), and has thesame size and shape as those of the lens of the microlens layer 220. Inother words, although it is not essentially necessary to provide themicrolens layer 220 in the effective photosensitive region-surroundingregion A2, the deformation of the lens can be prevented by extending themicrolens layer 220 to the effective photosensitive region-surroundingregion A2 and thereby providing the dummy lens 251.

The above dummy lens 251 can be formed during formation of the microlenslayer 220, and therefore, can be formed without an increase in thenumber of steps.

Thus, if a structure having the same strength per unit area as that ofthe microlens layer 220 is formed of the same material (inorganicmaterial) as that of the microlens layer 220 in the effective pixelregion-surrounding region A2, stress can be balanced between themicrolens layer 220 and the dummy lens 251.

In the end portion A3, provided is a flat film 302 that has a shapedifferent from that of the lens of the microlens layer 220 and is formedof the same material as that of the microlens layer 220 or the dummylens 251, as an extension of the dummy lens 251 in the effectivephotosensitive region-surrounding region A2. Note that the film 302 maynot be formed of the same material as that of the microlens layer or thedummy lens 251.

Thus, by providing the dummy lens 251, stress can be balanced betweenthe microlens layer 220 in the effective photosensitive region A1 andthe dummy lens 251, deformation of the microlens layer 220 can beprevented.

Configuration of Semiconductor Package in Second Embodiment

FIG. 4 is a diagram showing a configuration of a semiconductor packagein a second embodiment. The same parts of the semiconductor packageshown in FIG. 4 as those of the semiconductor package of the firstembodiment shown in FIG. 2 are indicated by the same referencecharacters and will not be described. In the other drawings, similarly,the same parts as those of the semiconductor package of the firstembodiment are indicated by the same reference characters and will notbe described

Although semiconductor packages in the second to sixth embodiments willbe described below, all the semiconductor packages have the sameconfiguration in the effective photosensitive region A1, which will notbe described. Different configurations which are provided in theeffective photosensitive region-surrounding region A2 or/and the endportion A3 will be described.

In the semiconductor package 200 in the second embodiment shown in FIG.4, the configuration in the effective photosensitive region-surroundingregion A2 is different from that of the semiconductor package 200 in thefirst embodiment shown in FIG. 2. A stress adjustment film 301 isprovided instead of the dummy lens 251 in the effective photosensitiveregion-surrounding region A2 of the semiconductor package 200 shown inFIG. 4.

The stress adjustment film 301 is a flat film that has the same volumeper unit area as that of the lens of the microlens layer 220. The stressadjustment film 301 is formed of the same material as that of themicrolens layer 220.

In the end portion A3, provided is a flat film 302 formed of the same ordifferent material as or from that of the microlens layer 220.

Thus, by providing the flat stress adjustment film 301 having the samevolume per unit area as that of the lens of the microlens layer 220,stress can be balanced between the microlens layer 220 in the effectivephotosensitive region A1 and the stress adjustment film 301, andtherefore, deformation of the microlens layer 220 can be prevented.

Configuration of Semiconductor Package in Third Embodiment

FIG. 5 is a diagram showing a configuration of a semiconductor packagein a third embodiment. A semiconductor package 200 in the thirdembodiment shown in FIG. 5 is different from the semiconductor package200 in the first embodiment shown in FIG. 2 in the configuration of theeffective photosensitive region-surrounding region A2. A stressadjustment film 351 is provided in the effective photosensitiveregion-surrounding region A2 of the semiconductor package 200 shown inFIG. 5, instead of the dummy lens 251.

The stress adjustment film 351 is formed as a flat film, as with thestress adjustment film 301 shown in FIG. 4. The stress adjustment film351, which is formed of a material that is different from that of thelens of the microlens layer 220, is designed to have a thickness andstress that provide the same strength per unit area as that of themicrolens layer 220.

In the end portion A3, provided is a flat film 352 formed of the same ordifferent material as or from that of the microlens layer 220.

Thus, by providing the flat stress adjustment film 351 that has the samestrength per unit area as that of the lens of the microlens layer 220,stress can be balanced between the microlens layer 220 in the effectivephotosensitive region A1 and the stress adjustment film 351, andtherefore, deformation of the microlens layer 220 can be prevented.

Configuration of Semiconductor Package in Fourth Embodiment

FIG. 6 is a diagram showing a configuration of a semiconductor packagein a fourth embodiment. The semiconductor package 200 in the fourthembodiment shown in FIG. 6 is different from the semiconductor package200 in the first embodiment shown in FIG. 2 in the configuration of theend portion A3. A dummy lens 401 is provided in the effectivephotosensitive region-surrounding region A2 of the semiconductor package200 shown in FIG. 6 as in the semiconductor package 200 in the firstembodiment shown in FIG. 2, and in addition, an anchoring 402 isprovided in the end portion A3.

As shown in FIG. 6, the anchoring 402 provided in the end portion A3 hasan L-shape. The anchoring 402 includes a horizontal film 402 a and avertical film 402 b. The horizontal film 402 a is provided horizontallywith respect to the support substrate 211 and the like, and the verticalfilm 402 b is provided vertically with respect to the support substrate211 and the like.

One end of the horizontal film 402 a is formed as an extension of thedummy lens 401, and the other end is formed as one end of the verticalfilm 402 b. Also, the other end of the vertical film 402 b is in contactwith the support substrate 211, or penetrates into the support substrate211. FIG. 6 shows a case where the other end of the vertical film 402 bis in contact with the support substrate 211.

The anchoring 402 in the end portion A3 is formed of the same ordifferent material as or from that of the microlens layer 220. Althoughit is assumed that one end of the vertical film 402 b of the anchoring402 is connected to the support substrate 211, one end of the verticalfilm 402 b of the anchoring 402 may be connected to another portion.Also, the horizontal film 402 a and the vertical film 402 b may have thesame thickness. Alternatively, for example, the vertical film 402 b maybe formed to be thicker than the horizontal film 402 a.

Thus, by providing the dummy lens 251, stress can be balanced betweenthe microlens layer 220 in the effective photosensitive region A1 andthe dummy lens 251, and therefore, deformation of the microlens layer220 can be prevented. Moreover, by providing the anchoring 402 in theend portion A3, and connecting the anchoring 402 to another portion,such as the support substrate 211 or the like, so that the anchoring 402is physically fixed, deformation of the microlens layer 220 can befurther prevented.

Configuration of Semiconductor Package in Fifth Embodiment

FIG. 7 is a diagram showing a configuration of a semiconductor packagein a fifth embodiment. The semiconductor package 200 in the fifthembodiment shown in FIG. 7 includes a stress adjustment film 451 as inthe effective photosensitive region-surrounding region A2 of thesemiconductor package 200 in the second embodiment shown in FIG. 4, andan anchoring 452 as in the end portion A3 of the semiconductor package200 in the fourth embodiment shown in FIG. 6.

The anchoring 452 provided in the end portion A3 has an L-shape as withthe anchoring 402 of FIG. 6. A horizontal film 452 a is providedhorizontally with respect to the support substrate 211 and the like, anda vertical film 452 b is provided vertically with respect to the supportsubstrate 211 and the like.

One end of the horizontal film 452 a is formed as an extension of thestress adjustment film 451, and the other end is formed as one end ofthe vertical film 452 b. Also, the other end of the vertical film 452 bis in contact with the support substrate 211, or penetrates into thesupport substrate 211. FIG. 7 shows a case where the other end of thevertical film 452 b is in contact with the support substrate 211.

As described above with reference to FIG. 4, the stress adjustment film451 is a flat film having the same volume per unit area as that of thelens of the microlens layer 220, and is formed of the same material asthat of the microlens layer 220. Although the anchoring 452 is formed asan extension of the stress adjustment film 451 thus configured, thestress adjustment film 451 and the anchoring 452 may not have the samethickness. Also, the anchoring 452 may be formed of the same ordifferent material as or from that of the microlens layer 220 or thestress adjustment film 451.

Thus, by providing the flat stress adjustment film 451 having the samevolume per unit area as that of the lens of the microlens layer 220,stress can be balanced between the microlens layer 220 in the effectivephotosensitive region A1 and the stress adjustment film 451, andtherefore, deformation of the microlens layer 220 can be prevented.Moreover, by providing the anchoring 452 in the end portion A3, andconnecting the anchoring 452 to another portion, such as the supportsubstrate 211 or the like, so that the anchoring 452 is physicallyfixed, deformation of the microlens layer 220 can be further prevented.

Configuration of Semiconductor Package in Sixth Embodiment

FIG. 8 is a diagram showing a configuration of a semiconductor packagein a sixth embodiment. The semiconductor package 200 in the sixthembodiment shown in FIG. 8 includes a stress adjustment film 501 as inthe effective photosensitive region-surrounding region A2 of thesemiconductor package 200 in the third embodiment shown in FIG. 5, andan anchoring 502 as in the end portion A3 of the semiconductor package200 in the fourth embodiment shown in FIG. 6.

The anchoring 502 provided in the end portion A3 has an L-shape as withthe anchoring 402 shown in FIG. 6. A horizontal film 502 a is providedhorizontally with respect to the support substrate 211 and the like, anda vertical film 502 b is provided vertically with respect to the supportsubstrate 211 and the like.

One end of the horizontal film 502 a is formed as an extension of thestress adjustment film 501, and the other end is formed as one end ofthe vertical film 502 b. Also, the other end of the vertical film 502 bis in contact with the support substrate 211, or penetrates into thesupport substrate 211. FIG. 8 shows a case where the other end of thevertical film 502 b is in contact with the support substrate 211.

As described above with reference to FIG. 5, the stress adjustment film501, which is formed of a material that is different from that of thelens of the microlens layer 220, is designed to have a thickness andstress that provide the same strength per unit area as that of themicrolens layer 220. Although the anchoring 502 is formed as anextension of the stress adjustment film 501 thus configured, the stressadjustment film 501 and the anchoring 502 may not have the samethickness. Also, the anchoring 502 may be formed of the same ordifferent material as or from that of the microlens layer 220 or thestress adjustment film 501.

Thus, by providing the flat stress adjustment film 501 having the samevolume per unit area as that of the lens of the microlens layer 220,stress can be balanced between the microlens layer 220 in the effectivephotosensitive region A1 and the stress adjustment film 501, andtherefore, deformation of the microlens layer 220 can be prevented.Moreover, by providing the anchoring 502 in the end portion A3, andconnecting the anchoring 502 to another portion, such as the supportsubstrate 211 or the like, so that the anchoring 502 is physicallyfixed, deformation of the microlens layer 220 can be further prevented.

Here, referring back to FIG. 3, a way to provide an anchoring will bedescribed. Here, of the anchoring 402 (FIG. 6), the anchoring 452 (FIG.7), and the anchoring 502 (FIG. 8), the anchoring 402 will be describedby way of example. A description below is also applicable to theanchoring 452 and the anchoring 502.

Referring to FIG. 3, three quadrangles are shown in FIG. 3. Theinnermost quadrangle represents the effective photosensitive region A1,and the second innermost quadrangle represents the anchoring 402.Specifically, in the example shown in FIG. 3, the anchoring 402 iscontinuously provided to surround the effective photosensitive regionA1. Thus, by continuously providing the anchoring 402 to surround thechip, the anchoring 402 can have the effect of a sealing member thatprevents water absorption.

Alternatively, as shown in FIG. 9, the anchoring 402 may bediscontinuously provided. FIG. 9 shows three quadrangles as in FIG. 3.The innermost quadrangle represents the effective photosensitive regionA1, and the second innermost quadrangle illustrated by a dashed linerepresents the anchoring 402.

For example, the anchoring 402 may not be continuously provided, due tointerconnection or the like. Also, even if the anchoring 402 is notcontinuously provided, deformation of the lens of the microlens layer220 can be prevented. Therefore, as shown in FIG. 9, the anchoring 402may be discontinuously provided. Note that when the anchoring 402 may bediscontinuously provided, the anchoring 402 is preferably uniformlyprovided. If the anchoring 402 is uniformly provided, deformation of thelens of the microlens layer 220 can be more reliably prevented.

Configuration of Semiconductor Package in Seventh Embodiment

FIG. 10 is a diagram showing a configuration of a semiconductor packagein a seventh embodiment. The semiconductor package 200 in the seventhembodiment includes a connection unit 551 in the effectivephotosensitive region A1 to prevent deformation of the lens of themicrolens layer 220.

The connection unit 551 is formed of the same material as that of themicrolens layer 220, extending in the vertical direction with respect toeach layer. Also, the connection unit 551 is provided between each lensin an optically non-effective region between each pixel. One end of theconnection unit 551 forms a portion of the microlens layer 220, and theother end is in contact with the support substrate 211 or penetratesinto the support substrate 211. FIG. 10 shows a case where the other endof the connection unit 551 is in contact with the support substrate 211.

As shown in FIG. 10, the connection unit 551 may be provided for eachlens of the microlens layer 220, or may be provided for each group oflenses (equally spaced).

Thus, by providing the connection unit 551, even under a situation thatthe lens of the microlens layer 220 would be deformed, the deformationcan be prevented by the connection unit 551. Therefore, deformation ofthe lens of the microlens layer 220 can be prevented.

Note that the configuration of the semiconductor package in the seventhembodiment may be combined with the configuration of any of thesemiconductor packages in the first to sixth embodiments. Specifically,the connection unit 551 may be provided in the effective photosensitiveregion A1 according to the seventh embodiment, and in addition, a dummylens or stress adjustment film may be provided in the effectivephotosensitive region-surrounding region A2, and an anchoring may beprovided in the end portion A3.

Although, in the above embodiments, a cavityless CSP has been describedby way of example, the applicable range of the present technology is notlimited to cavityless CSPs, and the present technology is alsoapplicable to other CSPs. Also, although, in the above embodiments, aback-illuminated semiconductor package has been described by way ofexample, the present technology is also applicable to afront-illuminated semiconductor package or the like, for example.

The present technology is applicable to a case where a lens is providedand is likely to be deformed.

Configuration of Electronic Apparatus

The above semiconductor package is applicable to substantially anyelectronic apparatus that employs a semiconductor package as an imagecapture unit (photoelectric conversion unit), such as image captureapparatuses (a digital still camera, video camera, etc.), mobileterminals having an image capture function (a mobile telephone, etc.), acopier that employs an image capture apparatus as an image reader, andthe like.

FIG. 11 is a block diagram showing an example configuration of anelectronic apparatus according to the present technology, such as animage capture apparatus. As shown in FIG. 11, an image capture apparatus1000 according to the present technology includes an optical systemincluding a lens group 1001 and the like, an image sensor (imagingdevice) 1002, a DSP circuit 1003, a frame memory 1004, a display device1005, a recording device 1006, an operation system 1007, a power supplysystem 1008, and the like. Also, the DSP circuit 1003, the frame memory1004, the display device 1005, the recording device 1006, the operationsystem 1007, and the power supply system 1008 are connected togetherthrough a bus line 1009.

The lens group 1001 brings incident light (image light) from an objectto a focus on an imaging surface of the image sensor 1002. The imagesensor 1002 converts the amount of incident light brought by the lensgroup 1001 to a focus on the imaging surface, into electrical signalsusing pixel units, and outputs the electrical signals as pixel signals.

The display device 1005, which is a panel display device, such as aliquid crystal display device, electroluminescence (EL) display device,or the like, displays a moving image or still image captured by theimage sensor 1002. The recording device 1006 records a moving image orstill image captured by the image sensor 1002 to a recording medium,such as a video tape, digital versatile disk (DVD), or the like.

The operation system 1007 outputs operation instructions for variousfunctions of the image capture apparatus according to the user'soperation. The power supply system 1008 supplies various power suppliesthat are operation power supplies for the DSP circuit 1003, the framememory 1004, the display device 1005, the recording device 1006, and theoperation system 1007, to these parts to which power is to be supplied,as appropriate.

The image capture apparatus thus configured may be used as an imagecapture apparatus, such as a video camera or a digital still camera, acamera module for a mobile apparatus (a mobile telephone, etc.), or thelike. Also, in the image capture apparatus, the above semiconductorpackage can be used as the image sensor 1002.

As used herein, the system refers to an entire apparatus including aplurality of apparatuses.

Note that embodiments of the present technology are not limited to theabove embodiments, and various changes can be made without departing thescope or spirit of the present technology.

Additionally, the present technology may also be configured as below.

-   (1)

A semiconductor device including:

a multilayer substrate including an optical element;

a light-transmitting plate provided on the substrate to cover theoptical element; and

a lens of an inorganic material provided between the substrate and thelight-transmitting plate,

wherein a structure having a same strength as a strength per unit areaof the lens is provided at a portion outside an effective photosensitiveregion where the optical element is formed, when the substrate is viewedin plan.

-   (2)

The semiconductor device according to (1), further including:

a first organic material layer provided below the lens; and

a second organic material layer provided above the lens.

-   (3)

The semiconductor device according to (1) or (2),

wherein the structure has a same shape as the lens and is formed of theinorganic material.

-   (4)

The semiconductor device according to any of (1) to (3),

wherein the structure is a flat film that is formed of a same materialas the lens and has a same volume per unit area as the lens.

-   (5)

The semiconductor device according to any of (1) to (3),

wherein the structure is a flat film that is designed to have a samestrength per unit area as the lens.

-   (6)

The semiconductor device according to any of (1) to (5), furtherincluding:

a film having one end provided as an extension of the lens and the otherend connected to a predetermined layer of the substrate.

-   (7)

The semiconductor device according to (6),

wherein the film is continuously provided to surround the effectivephotosensitive region.

-   (8)

The semiconductor device according to (6),

wherein the film is discontinuously provided to surround the effectivephotosensitive region.

-   (9)

The semiconductor device according to any of (1) to (7),

wherein the inorganic material is silicon nitride.

-   (10)

The semiconductor device according to any of (1) to (9),

wherein the semiconductor device is a back-illuminated image sensor.

-   (11)

The semiconductor device according to any of (1) to (9),

wherein the semiconductor device is a front-illuminated image sensor.

-   (12)

A semiconductor device including:

a multilayer substrate including an optical element;

a light-transmitting plate provided on the substrate to cover theoptical element; and

a lens of an inorganic material provided between the substrate and thelight-transmitting plate,

wherein a portion of the lens is connected to a predetermined layer ofthe substrate by a film formed of a same material as the lens.

-   (13)

An electronic apparatus including:

a semiconductor device including

-   -   a multilayer substrate including an optical element,    -   a light-transmitting plate provided on the substrate to cover        the optical element, and    -   a lens of an inorganic material provided between the substrate        and the light-transmitting plate,    -   wherein a structure having a same strength as a strength per        unit area of the lens is provided at a portion outside an        effective photosensitive region where the optical element is        formed, when the substrate is viewed in plan; and

a signal processing unit that performs a signal process on a pixelsignal output from the semiconductor device.

REFERENCE SIGNS LIST

-   100 CMOS image sensor-   111 pixel array unit-   200 semiconductor package-   212 interconnection layer-   213 silicon substrate-   214 photodiode-   215 protective film-   216 light shield film-   217 planarization film-   218 color filter layer-   219 first organic material layer-   220 microlens layer-   221 cover glass-   222 second organic material layer-   251 dummy lens-   252 film-   301 stress adjustment film-   302 film-   351 stress adjustment film-   352 film-   401 dummy lens-   402 anchoring-   451 stress adjustment film-   452 anchoring-   501 stress adjustment film-   502 anchoring-   551 connection unit

What is claimed is:
 1. A semiconductor device comprising: a multilayersubstrate including an optical element; a light-transmitting plateprovided on the substrate to cover the optical element; and a lens of aninorganic material provided between the substrate and thelight-transmitting plate, wherein a structure having a same strength asa strength per unit area of the lens is provided at a portion outside aneffective photosensitive region where the optical element is formed,when the substrate is viewed in plan.
 2. The semiconductor deviceaccording to claim 1, further comprising: a first organic material layerprovided below the lens; and a second organic material layer providedabove the lens.
 3. The semiconductor device according to claim 1,wherein the structure has a same shape as the lens and is formed of theinorganic material.
 4. The semiconductor device according to claim 1,wherein the structure is a flat film that is formed of a same materialas the lens and has a same volume per unit area as the lens.
 5. Thesemiconductor device according to claim 1, wherein the structure is aflat film that is designed to have a same strength per unit area as thelens.
 6. The semiconductor device according to claim 1, furthercomprising: a film having one end provided as an extension of the lensand the other end connected to a predetermined layer of the substrate.7. The semiconductor device according to claim 6, wherein the film iscontinuously provided to surround the effective photosensitive region.8. The semiconductor device according to claim 6, wherein the film isdiscontinuously provided to surround the effective photosensitiveregion.
 9. The semiconductor device according to claim 1, wherein theinorganic material is silicon nitride.
 10. The semiconductor deviceaccording to claim 1, wherein the semiconductor device is aback-illuminated image sensor.
 11. The semiconductor device according toclaim 1, wherein the semiconductor device is a front-illuminated imagesensor.
 12. A semiconductor device comprising: a multilayer substrateincluding an optical element; a light-transmitting plate provided on thesubstrate to cover the optical element; and a lens of an inorganicmaterial provided between the substrate and the light-transmittingplate, wherein a portion of the lens is connected to a predeterminedlayer of the substrate by a film formed of a same material as the lens.13. An electronic apparatus comprising: a semiconductor device includinga multilayer substrate including an optical element, alight-transmitting plate provided on the substrate to cover the opticalelement, and a lens of an inorganic material provided between thesubstrate and the light-transmitting plate, wherein a structure having asame strength as a strength per unit area of the lens is provided at aportion outside an effective photosensitive region where the opticalelement is formed, when the substrate is viewed in plan; and a signalprocessing unit that performs a signal process on a pixel signal outputfrom the semiconductor device.